The Microstructures and Electrical Resistivity of (Al, Cr, Ti)FeCoNiOx High-Entropy Alloy Oxide Thin Films

Advances in Materials Science and Engineering. 2015;2015 DOI 10.1155/2015/353140

 

Journal Homepage

Journal Title: Advances in Materials Science and Engineering

ISSN: 1687-8434 (Print); 1687-8442 (Online)

Publisher: Hindawi Publishing Corporation

LCC Subject Category: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials | Science: Physics

Country of publisher: Egypt

Language of fulltext: English

Full-text formats available: PDF, HTML, ePUB, XML

 

AUTHORS

Chun-Huei Tsau (Graduate School of Nanomaterials, Chinese Culture University, Taipei 111, Taiwan)
Zhang-Yan Hwang (Graduate School of Nanomaterials, Chinese Culture University, Taipei 111, Taiwan)
Swe-Kai Chen (Materials Science Center, National Tsing Hua University, Hsinchu 300, Taiwan)

EDITORIAL INFORMATION

Blind peer review

Editorial Board

Instructions for authors

Time From Submission to Publication: 19 weeks

 

Abstract | Full Text

The (Al, Cr, Ti)FeCoNi alloy thin films were deposited by PVD and using the equimolar targets with same compositions from the concept of high-entropy alloys. The thin films became metal oxide films after annealing at vacuum furnace for a period; and the resistivity of these thin films decreased sharply. After optimum annealing treatment, the lowest resistivity of the FeCoNiOx, CrFeCoNiOx, AlFeCoNiOx, and TiFeCoNiOx films was 22, 42, 18, and 35 μΩ-cm, respectively. This value is close to that of most of the metallic alloys. This phenomenon was caused by delaminating of the alloy oxide thin films because the oxidation was from the surfaces of the thin films. The low resistivity of these oxide films was contributed to the nonfully oxidized elements in the bottom layers and also vanishing of the defects during annealing.