Elastic modulus of β-Ga2O3 nanowires measured by resonance and three-point bending techniques

Abstract

Due to the recent interest in ultrawide bandgap β-Ga2O3 thin films and nanostructures for various electronics and UV device applications, it is important to understand the mechanical properties of Ga2O3 nanowires (NWs). In this work, we investigated the elastic modulus of individual β-Ga2O3 NWs using two distinct techniques – in-situ scanning electron microscopy resonance and three-point bending in atomic force microscopy. The structural and morphological properties of the synthesised NWs were investigated using X-ray diffraction, transmission and scanning electron microscopies. The resonance tests yielded the mean elastic modulus of 34.5 GPa, while 75.8 GPa mean value was obtained via three-point bending. The measured elastic moduli values indicate the need for finely controllable β-Ga2O3 NW synthesis methods and detailed post-examination of their mechanical properties before considering their application in future nanoscale devices.

Keywords

• atomic force microscopy
• elastic modulus
• gallium oxide
• mechanical properties
• nanowire
• scanning electron microscopy