Capacitance-voltage characteristics of GaAs ion-implanted structures

Abstract

A noniterative numerical method is proposed to calculate the barrier capacitance of GaAs ion-implanted structures as a function of the Schottky barrier bias. The features of the low- and high-frequency capacitance-voltage characteristics of these structures which are due to the presence of deep traps are elucidated.

Keywords

• gallium arsenide
• ion-implanted structure
• Schottky barrier
• capacitance-voltage characteristic
• deep traps