Capacitance-voltage characteristics of GaAs ion-implanted structures

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature. 2008;(4):52-54

 

Journal Homepage

Journal Title: Tekhnologiya i Konstruirovanie v Elektronnoi Apparature

ISSN: 2225-5818 (Print); 2309-9992 (Online)

Publisher: Politehperiodika

LCC Subject Category: Technology: Electrical engineering. Electronics. Nuclear engineering

Country of publisher: Ukraine

Language of fulltext: Russian, English

Full-text formats available: PDF

 

AUTHORS

Privalov E. N.
Gorev N. B.,
Kodzhespirova I. F.

EDITORIAL INFORMATION

Double blind peer review

Editorial Board

Instructions for authors

Time From Submission to Publication: 4 weeks

 

Abstract | Full Text

A noniterative numerical method is proposed to calculate the barrier capacitance of GaAs ion-implanted structures as a function of the Schottky barrier bias. The features of the low- and high-frequency capacitance-voltage characteristics of these structures which are due to the presence of deep traps are elucidated.