Capacitance-voltage characteristics of GaAs ion-implanted structures
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature. 2008;(4):52-54
Journal Title: Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
ISSN: 2225-5818 (Print); 2309-9992 (Online)
LCC Subject Category: Technology: Electrical engineering. Electronics. Nuclear engineering
Country of publisher: Ukraine
Language of fulltext: Russian, English
Full-text formats available: PDF
Privalov E. N.
Gorev N. B.,
Kodzhespirova I. F.
Abstract | Full Text
A noniterative numerical method is proposed to calculate the barrier capacitance of GaAs ion-implanted structures as a function of the Schottky barrier bias. The features of the low- and high-frequency capacitance-voltage characteristics of these structures which are due to the presence of deep traps are elucidated.