Buckling of Single-Crystal Silicon Nanolines under Indentation

Journal of Nanomaterials. 2008;2008 DOI 10.1155/2008/132728

 

Journal Homepage

Journal Title: Journal of Nanomaterials

ISSN: 1687-4110 (Print); 1687-4129 (Online)

Publisher: Hindawi Publishing Corporation

LCC Subject Category: Technology: Technology (General)

Country of publisher: Egypt

Language of fulltext: English

Full-text formats available: PDF, HTML, ePUB

 

AUTHORS

Min K. Kang (Department of Aerospace Engineering and Engineering Mechanics, University of Texas, Austin, TX 78712, USA)
Bin Li (Microelectronics Research Center, University of Texas, Austin, TX 78758, USA)
Paul S. Ho (Microelectronics Research Center, University of Texas, Austin, TX 78758, USA)
Rui Huang (Department of Aerospace Engineering and Engineering Mechanics, University of Texas, Austin, TX 78712, USA)

EDITORIAL INFORMATION

Blind peer review

Editorial Board

Instructions for authors

Time From Submission to Publication: 16 weeks

 

Abstract | Full Text

Atomic force microscope-(AFM-) based indentation tests were performed to examine mechanical properties of parallel single-crystal silicon nanolines (SiNLs) of sub-100-nm line width, fabricated by a process combining electron-beam lithography and anisotropic wet etching. The SiNLs have straight and nearly atomically flat sidewalls, and the cross section is almost perfectly rectangular with uniform width and height along the longitudinal direction. The measured load-displacement curves from the indentation tests show an instability with large displacement bursts at a critical load ranging from 480 μN to 700 μN. This phenomenon is attributed to a transition of the buckling mode of the SiNLs under indentation. Using a set of finite element models with postbuckling analyses, we analyze the indentation-induced buckling modes and investigate the effects of tip location, contact friction, and substrate deformation on the critical load of mode transition. The results demonstrate a unique approach for the study of nanomaterials and patterned nanostructures via a combination of experiments and modeling.