In situ atomic-level observation of the formation of platinum silicide at platinum-silicon oxide interfaces under electron irradiation

Abstract

In situ atomic-level observation of the formation of Pt2Si at Pt/SiOx interface by electronic excitation under electron irradiation was performed by using scanning transmission electron microscopy. Scanning of an electron-beam probe stimulates silicide formation at the Pt/SiOx interface; the change in the Pt column corresponding to Pt2Si formation with a crystallographic orientation of (001)Pt//(001)Pt2Si and [110]Pt//[110]Pt2Si was observed in high-angle annular dark-field images.