APL Materials (Mar 2017)

Background–limited long wavelength infrared InAs/InAs1− xSbx type-II superlattice-based photodetectors operating at 110 K

  • Abbas Haddadi,
  • Arash Dehzangi,
  • Sourav Adhikary,
  • Romain Chevallier,
  • Manijeh Razeghi

DOI
https://doi.org/10.1063/1.4975619
Journal volume & issue
Vol. 5, no. 3
pp. 035502 – 035502-5

Abstract

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We report the demonstration of high-performance long-wavelength infrared (LWIR) nBn photodetectors based on InAs/InAs1− xSbx type-II superlattices. A new saw-tooth superlattice design was used to implement the electron barrier of the photodetectors. The device exhibited a cut-off wavelength of ∼10 μ m at 77 K. The photodetector exhibited a peak responsivity of 2.65 A/W, corresponding to a quantum efficiency of 43%. With an R × A of 664 Ω · cm 2 and a dark current density of 8 × 10−5 A/cm2, under −80 mV bias voltage at 77 K, the photodetector exhibited a specific detectivity of 4.72 × 1011 cm· Hz / W and a background–limited operating temperature of 110 K.