Magnetic tunnel junctions using epitaxially grown FeAlSi electrode with soft magnetic property

Shoma Akamatsu; Mikihiko Oogane; Masakiyo Tsunoda; Yasuo Ando

doi:10.1063/5.0094619

AIP Advances (Jul 2022)

Magnetic tunnel junctions using epitaxially grown FeAlSi electrode with soft magnetic property

Shoma Akamatsu,
Mikihiko Oogane,
Masakiyo Tsunoda,
Yasuo Ando

Affiliations

Shoma Akamatsu: Department of Applied Physics, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
Mikihiko Oogane: Department of Applied Physics, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
Masakiyo Tsunoda: Center for Spintronics Research Network, Tohoku University, Sendai 980-8577, Japan
Yasuo Ando: Department of Applied Physics, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

DOI: https://doi.org/10.1063/5.0094619
Journal volume & issue: Vol. 12, no. 7
pp. 075021 – 075021-5

Abstract

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Magnetic tunnel junctions (MTJs) with (001)-oriented D03-FeAlSi epitaxial films, which have both soft magnetic properties and surface flatness, were fabricated and characterized. A tunnel magnetoresistance (TMR) ratio of 121% was observed, and a relatively low switching field was also confirmed, reflecting the soft magnetic property of FeAlSi. However, the results of the cross-sectional TEM image of the MTJ and the bias dependence of the TMR ratio indicate that the FeAlSi/MgO interface is probably oxidized. Therefore, since an insertion layer at the interface can suppress oxidation and further improve the TMR ratio, MTJs using FeAlSi epitaxial films are promising structures suitable for applications such as MTJ-based magnetic sensors and worthy of further investigation.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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