Advances in ultrashallow doping of silicon

Abstract

Ultrashallow doping is required for both classical field-effect transistors in integrated circuits and revolutionary quantum devices in quantum computing. In this review, we give a brief overview on recent research advances in three technologies to form ultrashallow doping, namely molecular monolayer doping, molecular beam epitaxy, and low energy ion implantation. A research perspective will be provided at the end of this review.

Keywords

• ultrashallow junctions
• molecular monolayer doping
• molecular beam epitaxy
• ion implantation
• sub-second thermal annealing