Size effect of the Ge2Sb2Te5 cell atop the silicon nitride O-ring resonator on the attenuation coefficient

Petr Lazarenko; Vadim Kovalyuk; Pavel An; Aleksey Prokhodtsov; Alexander Golikov; Aleksey Sherchenkov; Sergey Kozyukhin; Ilia Fradkin; Galina Chulkova; Gregory Goltsman

doi:10.1063/5.0066387

APL Materials (Dec 2021)

Size effect of the Ge2Sb2Te5 cell atop the silicon nitride O-ring resonator on the attenuation coefficient

Petr Lazarenko,
Vadim Kovalyuk,
Pavel An,
Aleksey Prokhodtsov,
Alexander Golikov,
Aleksey Sherchenkov,
Sergey Kozyukhin,
Ilia Fradkin,
Galina Chulkova,
Gregory Goltsman

Affiliations

Petr Lazarenko: Institute of Advanced Materials and Technologies, National Research University of Electronic Technology, Zelenograd 124498, Russia
Vadim Kovalyuk: Department of Physics, Moscow Pedagogical State University, Moscow 119435, Russia
Pavel An: Department of Physics, Moscow Pedagogical State University, Moscow 119435, Russia
Aleksey Prokhodtsov: National Research University Higher School of Economics, Moscow 101000, Russia
Alexander Golikov: Institute of Advanced Materials and Technologies, National Research University of Electronic Technology, Zelenograd 124498, Russia
Aleksey Sherchenkov: Institute of Advanced Materials and Technologies, National Research University of Electronic Technology, Zelenograd 124498, Russia
Sergey Kozyukhin: Kurnakov Institute of General and Inorganic Chemistry of the RAS, Moscow 119991, Russia
Ilia Fradkin: Skolkovo Institute of Science and Technology, Bolshoy Boulevard 30, Moscow 121205, Russia
Galina Chulkova: Department of Physics, Moscow Pedagogical State University, Moscow 119435, Russia
Gregory Goltsman: National Research University Higher School of Economics, Moscow 101000, Russia

DOI: https://doi.org/10.1063/5.0066387
Journal volume & issue: Vol. 9, no. 12
pp. 121104 – 121104-8

Abstract

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We have studied transmission spectra of a silicon nitride O-ring resonator with a Ge2Sb2Te5 (GST) thin-film cover. We have performed numerical simulations of the transmission, absorption, reflection, and scattering for the GST cells of various thicknesses and lengths and have also measured transmission spectra O-ring resonators for GST cells of various length and phase states. An analysis of the changes in the Q-factors has enabled us to identify the region of the GST cells where light scattering and absorption dominate and find the size dependence of amorphous and crystalline GST attenuation coefficients. The demonstrated results pave the way to high energy-efficient on-chip devices of a small footprint that can be switched either optically or electrically.

Published in APL Materials

ISSN: 2166-532X (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Technology: Chemical technology: Biotechnology; Science: Physics
Website: http://aplmaterials.aip.org

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