Polarization Dependence of Surface Enhanced Raman Scattering on a Single Dielectric Nanowire

Journal of Nanomaterials. 2012;2012 DOI 10.1155/2012/946868

 

Journal Homepage

Journal Title: Journal of Nanomaterials

ISSN: 1687-4110 (Print); 1687-4129 (Online)

Publisher: Hindawi Publishing Corporation

LCC Subject Category: Technology: Technology (General)

Country of publisher: Egypt

Language of fulltext: English

Full-text formats available: PDF, HTML, ePUB

 

AUTHORS

Hua Qi (Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375, USA)
R. W. Rendell (Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375, USA)
O. J. Glembocki (Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375, USA)
S. M. Prokes (Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375, USA)

EDITORIAL INFORMATION

Blind peer review

Editorial Board

Instructions for authors

Time From Submission to Publication: 16 weeks

 

Abstract | Full Text

Our measurements of surface enhanced Raman scattering (SERS) on Ga2O3 dielectric nanowires (NWs) core/silver composites indicate that the SERS enhancement is highly dependent on the polarization direction of the incident laser light. The polarization dependence of the SERS signal with respect to the direction of a single NW was studied by changing the incident light angle. Further investigations demonstrate that the SERS intensity is not only dependent on the direction and wavelength of the incident light, but also on the species of the SERS active molecule. The largest signals were observed on an NW when the incident 514.5 nm light was polarized perpendicular to the length of the NW, while the opposite phenomenon was observed at the wavelength of 785 nm. Our theoretical simulations of the polarization dependence at 514.5 nm and 785 nm are in good agreement with the experimental results.