Purely Electric‐Driven Field‐Free Magnetization Switching in L10‐FePt Single Film for Reconfigurable Spin Logic Computing

Abstract

Abstract Magnetization switching driven by spin‐orbit torques (SOTs) in perpendicular single magnets contributes to the development of high‐efficiency next‐generation spintronic memory and logic. However, the in‐plane magnetic fields required for deterministic magnetization switching in single magnets hamper the design of all‐electric‐control devices. Herein, a simple, efficient, and reliable all‐electric‐control magnetization switching in a sputtered single L10‐FePt film with an artificial lateral gradient is reported. The deterministic magnetization switching exhibits a strong angle dependence and can be effectively tuned through lateral asymmetry. A maximum self‐switching ratio of 18% is achieved without magnetic fields. The structural characterization results reveal that this deterministic magnetization self‐switching can be primarily attributed to the ordering degree gradient. Furthermore, a programmable Boolean logic device together with a full adder is constructed using the single L10‐FePt magnet. The findings of the study highlight an effective route to accomplish electrical spin manipulation in single magnets. This enables the design of purely electrically controlled SOTs‐based logic and in‐memory computing.

Keywords

• lateral gradients
• spin logic‐in‐memory
• spin‐orbit torques
• sputtered single L10‐FePt magnet