Electrical Transport and Magnetoresistance in Single-Wall Carbon Nanotubes Films

Medžiagotyra. 2014;20(2):126-128 DOI 10.5755/j01.ms.20.2.6311


Journal Homepage

Journal Title: Medžiagotyra

ISSN: 1392-1320 (Print); 2029-7289 (Online)

Publisher: Kaunas University of Technology

Society/Institution: KTU

LCC Subject Category: Technology: Mining engineering. Metallurgy

Country of publisher: Lithuania

Language of fulltext: English

Full-text formats available: PDF, HTML



Vitaly KSENEVICH (Department of Physics, Belarusian State University)
Mikhail SHUBA (Institute for Nuclear Problems, Belarusian State University)
Alesia PADDUBSKAYA (Institute for Nuclear Problems, Belarusian State University)


Peer review

Editorial Board

Instructions for authors

Time From Submission to Publication: 48 weeks


Abstract | Full Text

Electrical transport properties and magnetoresistance of single-wall carbon nanotubes (SWCNT) films were investigated within temperature range (2 – 300) K and in magnetic fields up to 8 T. A crossover between metallic (dR/dT &gt; 0) and non-metallic (dR/dT &lt; 0) temperature dependence of the resistance as well as low-temperature saturation of the resistance in high bias regime indicated on the diminishing of role of the contact barriers between individual nanotubes essential for the charge transport in SWCNT arrays. The magnetoresistance (MR) data demonstrated influence of weak localization and electron-electron interactions on charge transport properties in SWCNT films. The low-field negative MR with positive upturn was observed at low temperatures. At T &gt; 10 K only negative MR was observed in the whole range of available magnetic fields. The negative MR can be approximated using 1D weak localization (WL) model. The low temperature positive MR is induced by contribution from electron-electron interactions. <p>DOI: <a href="http://dx.doi.org/10.5755/j01.ms.20.2.6311">http://dx.doi.org/10.5755/j01.ms.20.2.6311</a></p>