Inductance, electrically adjusted by semiconductor structure
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature. 2012;(4):35-38
Journal Title: Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
ISSN: 2225-5818 (Print); 2309-9992 (Online)
LCC Subject Category: Technology: Electrical engineering. Electronics. Nuclear engineering
Country of publisher: Ukraine
Language of fulltext: English, Russian
Full-text formats available: PDF
Semenov А. А.
Usanov D. A.
Kolokin A. A.
Abstract | Full Text
A theoretical model of a passive flat inductor with electronic control is offered. Design charts of tank inductance and Q factor dependence on the forward bias voltage of n—i—p—i—n-structure, used as a specific core, the characteristics of which are regulated under the influence of an applied electric field, are presented. The comparison of design values with experimental features has shown their good correspondence with each other.