4H-SiC 64 pixels CMOS image sensors with 3T/4T-APS arrays

Abstract

For radiation-hardened CMOS image sensors (CIS), 4H-SiC 64 pixel array CIS were developed, and real time imaging with an operation frequency of 30 Hz was demonstrated. Two types of pixel arrays with a 3-transistor active pixel sensor (3T-APS) and a 4-transistor active pixel sensor (4T-APS) were fabricated with SiC MOSFETs, UV photodiodes and 3-layered Al interconnections. The SiC pixel arrays were combined with peripheral circuits and an optical lens, and SiC 64 pixel CIS with 3T-/4T-APS arrays were developed.

Keywords

• 4H-SiC
• CMOS image sensor
• radiation hardened
• active pixel sensor
• photodiode
• MOSFETs