Amorphous Sb2Te3 nanowires: Synthesis, characterization and size-dependent phase transition behavior

Abstract

Understanding the phase transition behavior of phase-change (PC) material with respect to the scaling effect is essential for the application of PC materials. Among all the PC materials, SbTe binary plays a significant role in the well-known Ge-Sb-Te system. Here we have used an unconventional and cost-effective method to fabricate a wide range of prototypical Sb2Te3 amorphous nanowires (18–220 nm in diameter) using templated electrodeposition. Compositional, morphological, and structural characterization of the amorphous nanowires were performed, and the crystallization temperature of in-template nanowires was measured using a four-probe resistivity meter. We report that the crystallization temperature of amorphous Sb2Te3 nanowires can be tuned with respect to the diameter of the nanowires and a significant increase was observed for the nanowires with diameters ≤35 nm. Our study sheds light on the size-dependent phase transition behavior of PC NWs with implications for further advancement of the PC memory technology.

Keywords

• Phase change materials
• Amorphous nanowires
• Antimony telluride
• Electrodeposition