Analog Integrated Circuits Based on Wafer-Level Two-Dimensional MoS<sub>2</sub> Materials With Physical and SPICE Model

Shunli Ma; Yan Wang; Xinyu Chen; Tianxiang Wu; Xi Wang; Hongwei Tang; Yuting Yao; Hao Yu; Yaochen Sheng; Jingyi Ma; Junyan Ren; Wenzhong Bao

doi:10.1109/ACCESS.2020.3034321

IEEE Access (Jan 2020)

Analog Integrated Circuits Based on Wafer-Level Two-Dimensional MoS<sub>2</sub> Materials With Physical and SPICE Model

Shunli Ma,
Yan Wang,
Xinyu Chen,
Tianxiang Wu,
Xi Wang,
Hongwei Tang,
Yuting Yao,
Hao Yu,
Yaochen Sheng,
Jingyi Ma,
Junyan Ren,
Wenzhong Bao

Affiliations

Shunli Ma: ORCiD; State Key Laboratory of ASIC and System, Fudan University, Shanghai, China
Yan Wang: State Key Laboratory of ASIC and System, Fudan University, Shanghai, China
Xinyu Chen: State Key Laboratory of ASIC and System, Fudan University, Shanghai, China
Tianxiang Wu: State Key Laboratory of ASIC and System, Fudan University, Shanghai, China
Xi Wang: State Key Laboratory of ASIC and System, Fudan University, Shanghai, China
Hongwei Tang: State Key Laboratory of ASIC and System, Fudan University, Shanghai, China
Yuting Yao: State Key Laboratory of ASIC and System, Fudan University, Shanghai, China
Hao Yu: State Key Laboratory of ASIC and System, Fudan University, Shanghai, China
Yaochen Sheng: State Key Laboratory of ASIC and System, Fudan University, Shanghai, China
Jingyi Ma: State Key Laboratory of ASIC and System, Fudan University, Shanghai, China
Junyan Ren: ORCiD; State Key Laboratory of ASIC and System, Fudan University, Shanghai, China
Wenzhong Bao: State Key Laboratory of ASIC and System, Fudan University, Shanghai, China

DOI: https://doi.org/10.1109/ACCESS.2020.3034321
Journal volume & issue: Vol. 8
pp. 197287 – 197299

Abstract

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In this article, accurate physical and SPICE model of wafer-level monolayer molybdenum disulfide (MoS2) device are developed to guide the devices and circuits design, which is the foundation of high-performance analog chip design. Moreover, the proposed model considers the non-ideality of thin films and the influence of Schottky contact with higher accuracy. The mean percentage error (MPE) of the physical model simulation and measurement results is 4.49%. Based on the SPICE model implemented in this article, the amplifier circuit and current amplifying circuits are implemented to verify the manufacturing process and accuracy of the device models, which shows the MoS2 is potential material to realize industrial applications. The MPE of the SPICE model simulation and measurement results is within 7.00% which can be utilized for our analog circuit design.

Published in IEEE Access

ISSN: 2169-3536 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6287639

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