On the Origin of Light Emission in Silicon Rich Oxide Obtained by Low-Pressure Chemical Vapor Deposition

Journal of Nanomaterials. 2012;2012 DOI 10.1155/2012/890701


Journal Homepage

Journal Title: Journal of Nanomaterials

ISSN: 1687-4110 (Print); 1687-4129 (Online)

Publisher: Hindawi Limited

LCC Subject Category: Technology: Technology (General)

Country of publisher: United Kingdom

Language of fulltext: English

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M. Aceves-Mijares (Department of Electronics, INAOE, 72840 Puebla, Mexico)
A. A. González-Fernández (Department of Micro and Nanosystems, IMB-CNM (CSIC), 08193 Barcelona, Spain)
R. López-Estopier (Department of Applied Physics and Electromagnetism, University of Valencia, 46100 Burjassot, Spain)
A. Luna-López (Research Center for Semiconductor Devices, Autonomous University of Puebla, 72570 Puebla, Mexico)
D. Berman-Mendoza (Departamento de Investigación en Física, Universidad de Sonora, 83000 Hermosillo, SON, Mexico)
A. Morales (Centro de Investigación en Materiales Avanzados S.C., Unidad Monterrey-PIIT, 66600 Apodaca, NL, Mexico)
C. Falcony (Department of Physics, CINVESTAV-IPN, 07360 Mexico City, DF, Mexico)
C. Domínguez (Department of Micro and Nanosystems, IMB-CNM (CSIC), 08193 Barcelona, Spain)
R. Murphy-Arteaga (Department of Electronics, INAOE, 72840 Puebla, Mexico)


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Time From Submission to Publication: 16 weeks


Abstract | Full Text

Silicon Rich Oxide (SRO) has been considered as a material to overcome the drawbacks of silicon to achieve optical functions. Various techniques can be used to produce it, including Low-Pressure Chemical Vapor Deposition (LPCVD). In this paper, a brief description of the studies carried out and discussions of the results obtained on electro-, cathode-, and photoluminescence properties of SRO prepared by LPCVD and annealed at 1,100°C are presented. The experimental results lead us to accept that SRO emission properties are due to oxidation state nanoagglomerates rather than to nanocrystals. The emission mechanism is similar to Donor-Acceptor decay in semiconductors, and a wide emission spectrum, from 450 to 850 nm, has been observed. The results show that emission is a function of both silicon excess in the film and excitation energy. As a result different color emissions can be obtained by selecting the suitable excitation energy.