Memory phototransistors based on exponential-association photoelectric conversion law

Zhibin Shao; Tianhao Jiang; Xiujuan Zhang; Xiaohong Zhang; Xiaofeng Wu; Feifei Xia; Shiyun Xiong; Shuit-Tong Lee; Jiansheng Jie

doi:10.1038/s41467-019-09206-w

Nature Communications (Mar 2019)

Memory phototransistors based on exponential-association photoelectric conversion law

Zhibin Shao,
Tianhao Jiang,
Xiujuan Zhang,
Xiaohong Zhang,
Xiaofeng Wu,
Feifei Xia,
Shiyun Xiong,
Shuit-Tong Lee,
Jiansheng Jie

Affiliations

Zhibin Shao: Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University
Tianhao Jiang: Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University
Xiujuan Zhang: Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University
Xiaohong Zhang: Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University
Xiaofeng Wu: Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University
Feifei Xia: School of Chemical and Environmental Engineering, Jiangsu University of Technology
Shiyun Xiong: Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University
Shuit-Tong Lee: Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University
Jiansheng Jie: Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University

DOI: https://doi.org/10.1038/s41467-019-09206-w
Journal volume & issue: Vol. 10, no. 1
pp. 1 – 10

Abstract

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CdS nanostructures can enable memory based photodetection by charge-storage accumulative effect. Here, the authors report CdS nanoribbons-based memory phototransistors with high responsivity of 3.8 × 109 A/W and detectivity of 7.7 × 1022 Jones that can detect weak light of 6 nW/cm2.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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