P3HT:PCBM Incorporated with Silicon Nanoparticles as Photoactive Layer in Efficient Organic Photovoltaic Devices

Journal of Nanomaterials. 2013;2013 DOI 10.1155/2013/354035

 

Journal Homepage

Journal Title: Journal of Nanomaterials

ISSN: 1687-4110 (Print); 1687-4129 (Online)

Publisher: Hindawi Publishing Corporation

LCC Subject Category: Technology: Technology (General)

Country of publisher: Egypt

Language of fulltext: English

Full-text formats available: PDF, HTML, ePUB

 

AUTHORS

Shang-Chou Chang (Department of Electrical Engineering, Kun Shan University, Da-Wan Road, Tainan City 71003, Taiwan)
Yu-Jen Hsiao (National Nano Device Laboratories, Tainan City 74147, Taiwan)
To-Sing Li (Department of Electrical Engineering, Kun Shan University, Da-Wan Road, Tainan City 71003, Taiwan)

EDITORIAL INFORMATION

Blind peer review

Editorial Board

Instructions for authors

Time From Submission to Publication: 16 weeks

 

Abstract | Full Text

Silicon nanoparticles doped poly(3-hexylthiophene) and [6,6]-phenyl C61-butyric acid methyl ester blends (P3HT:PCBM: Si NP) have been produced as the photoactive layer of organic photovoltaic devices (OPVs). The silicon nanoparticles’ size is between 80 and 100 nm checked by transmission electron microscope (TEM). The 0.35 wt% Si NP doping OPVs exhibit higher power conversion efficiency (PCE) than other OPVs. The PCE of the OPVs increases from 3.01% to 3.38% mainly due to increasing short-circuit current density from 8.38 to 9.48 mA/cm2, while the open-circuit voltage remains the same. The Si NP can provide extra exciton separation and electron pathways in hybrid solar cells.