Room temperature transparent conducting magnetic oxide (TCMO) properties in heavy ion doped oxide semiconductor
Juwon Lee,
Ganapathi Subramaniam Nagarajan,
Yoon Shon,
Younghae Kwon,
Tae Won Kang,
Deuk Yong Kim,
Hyungsang Kim,
Hyunsik Im,
Chang-Soo Park,
Eun Kyu Kim
Affiliations
Juwon Lee
Quantum-Functional Semiconductor Research Center and Nano Information Technology Academy(NITA), Dongguk University-Seoul, Seoul 100-715, Republic of Korea
Ganapathi Subramaniam Nagarajan
Quantum-Functional Semiconductor Research Center and Nano Information Technology Academy(NITA), Dongguk University-Seoul, Seoul 100-715, Republic of Korea
Yoon Shon
Quantum-Functional Semiconductor Research Center and Nano Information Technology Academy(NITA), Dongguk University-Seoul, Seoul 100-715, Republic of Korea
Younghae Kwon
Quantum-Functional Semiconductor Research Center and Nano Information Technology Academy(NITA), Dongguk University-Seoul, Seoul 100-715, Republic of Korea
Tae Won Kang
Quantum-Functional Semiconductor Research Center and Nano Information Technology Academy(NITA), Dongguk University-Seoul, Seoul 100-715, Republic of Korea
Deuk Yong Kim
Quantum-Functional Semiconductor Research Center and Nano Information Technology Academy(NITA), Dongguk University-Seoul, Seoul 100-715, Republic of Korea
Hyungsang Kim
Division of Physics and Semiconductor Science, Dongguk University, Seoul 100-715, Republic of Korea
Hyunsik Im
Division of Physics and Semiconductor Science, Dongguk University, Seoul 100-715, Republic of Korea
Chang-Soo Park
Quantum-Function Spinics Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Republic of Korea
Eun Kyu Kim
Quantum-Function Spinics Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Republic of Korea
Bismuth doped ZnO (ZnBi0.03O0.97) thin films are grown using pulsed laser deposition. The existence of positively charged Bi, absence of metallic zinc and the Zn-O bond formation in Bi doped ZnO are confirmed using X-ray Photoelectron Spectroscopy (XPS). Temperature dependent resistivity and UV-visible absorption spectra show lowest resistivity with 8.44 × 10-4 Ω cm at 300 K and average transmittance of 93 % in the visible region respectively. The robust ferromagnetic signature is observed at 350 K (7.156 × 10-4 emu/g). This study suggests that Bi doped ZnO films should be a potential candidate for spin based optoelectronic applications.
