Simple and cost-effective fabrication of size-tunable zinc oxide architectures by multiple size reduction technique

Science and Technology of Advanced Materials. 2012;13(2):025003


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Journal Title: Science and Technology of Advanced Materials

ISSN: 1468-6996 (Print); 1878-5514 (Online)

Publisher: Taylor & Francis Group

Society/Institution: National Institute for Materials Science

LCC Subject Category: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials | Technology: Chemical technology: Biotechnology

Country of publisher: United Kingdom

Language of fulltext: English

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Hyeong-Ho Park, Xin Zhang, Seon-Yong Hwang, Sang Hyun Jung, Semin Kang, Hyun-Beom Shin, Ho Kwan Kang, Hyung-Ho Park, Ross H Hill and Chul Ki Ko


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Time From Submission to Publication: 15 weeks


Abstract | Full Text

We present a simple size reduction technique for fabricating 400 nm zinc oxide (ZnO) architectures using a silicon master containing only microscale architectures. In this approach, the overall fabrication, from the master to the molds and the final ZnO architectures, features cost-effective UV photolithography, instead of electron beam lithography or deep-UV photolithography. A photosensitive Zn-containing sol–gel precursor was used to imprint architectures by direct UV-assisted nanoimprint lithography (UV-NIL). The resulting Zn-containing architectures were then converted to ZnO architectures with reduced feature sizes by thermal annealing at 400 °C for 1 h. The imprinted and annealed ZnO architectures were also used as new masters for the size reduction technique. ZnO pillars of 400 nm diameter were obtained from a silicon master with pillars of 1000 nm diameter by simply repeating the size reduction technique. The photosensitivity and contrast of the Zn-containing precursor were measured as 6.5 J cm−2 and 16.5, respectively. Interesting complex ZnO patterns, with both microscale pillars and nanoscale holes, were demonstrated by the combination of dose-controlled UV exposure and a two-step UV-NIL.