Nanoscale Research Letters (Jan 2019)

A High-Accuracy AlGaN/GaN Reverse Blocking CRD (RB-CRD) with Hybrid Trench Cathode

  • Anbang Zhang,
  • Qi Zhou,
  • Chao Yang,
  • Yuanyuan Shi,
  • Wanjun Chen,
  • Zhaoji Li,
  • Bo Zhang

DOI
https://doi.org/10.1186/s11671-019-2860-y
Journal volume & issue
Vol. 14, no. 1
pp. 1 – 6

Abstract

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Abstract An AlGaN/GaN lateral reverse blocking current regulating diode (RB-CRD) with trench Schottky anode and hybrid trench cathode has been proposed and experimentally demonstrated on silicon substrate. The Schottky barrier diode (SBD) integrated in the anode exhibits a turn-on voltage of 0.7 V and a reverse breakdown voltage of 260 V. The hybrid trench cathode acts as a CRD, which is in series connection with the anode SBD. A knee voltage of 1.3 V and a forward operation voltage beyond 200 V can be achieved for the RB-CRD. The RB-CRD is capable of outputting an excellent steady current in a wide temperature range from 25 to 300 °C. In addition, the forward regulating current exhibits small negative temperature coefficients less than − 0.152%/oC.

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