IEEE Transactions on Quantum Engineering (Jan 2022)
Qubit-Compatible Substrates With Superconducting Through-Silicon Vias
- K. Grigoras,
- N. Yurttagul,
- J.-P. Kaikkonen,
- E. T. Mannila,
- P. Eskelinen,
- D. P. Lozano,
- H.-X. Li,
- M. Rommel,
- D. Shiri,
- N. Tiencken,
- S. Simbierowicz,
- A. Ronzani,
- J. Hatinen,
- D. Datta,
- V. Vesterinen,
- L. Gronberg,
- J. Biznarova,
- A. Fadavi Roudsari,
- S. Kosen,
- A. Osman,
- M. Prunnila,
- J. Hassel,
- J. Bylander,
- J. Govenius
Affiliations
- K. Grigoras
- ORCiD
- VTT Technical Research Centre of Finland Ltd., QTF Centre of Excellence, VTT Espoo, Finland
- N. Yurttagul
- VTT Technical Research Centre of Finland Ltd., QTF Centre of Excellence, VTT Espoo, Finland
- J.-P. Kaikkonen
- VTT Technical Research Centre of Finland Ltd., QTF Centre of Excellence, VTT Espoo, Finland
- E. T. Mannila
- ORCiD
- VTT Technical Research Centre of Finland Ltd., QTF Centre of Excellence, VTT Espoo, Finland
- P. Eskelinen
- VTT Technical Research Centre of Finland Ltd., QTF Centre of Excellence, VTT Espoo, Finland
- D. P. Lozano
- ORCiD
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden
- H.-X. Li
- ORCiD
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden
- M. Rommel
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden
- D. Shiri
- ORCiD
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden
- N. Tiencken
- ORCiD
- VTT Technical Research Centre of Finland Ltd., QTF Centre of Excellence, VTT Espoo, Finland
- S. Simbierowicz
- ORCiD
- VTT Technical Research Centre of Finland Ltd., QTF Centre of Excellence, VTT Espoo, Finland
- A. Ronzani
- VTT Technical Research Centre of Finland Ltd., QTF Centre of Excellence, VTT Espoo, Finland
- J. Hatinen
- VTT Technical Research Centre of Finland Ltd., QTF Centre of Excellence, VTT Espoo, Finland
- D. Datta
- VTT Technical Research Centre of Finland Ltd., QTF Centre of Excellence, VTT Espoo, Finland
- V. Vesterinen
- ORCiD
- VTT Technical Research Centre of Finland Ltd., QTF Centre of Excellence, VTT Espoo, Finland
- L. Gronberg
- ORCiD
- VTT Technical Research Centre of Finland Ltd., QTF Centre of Excellence, VTT Espoo, Finland
- J. Biznarova
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden
- A. Fadavi Roudsari
- ORCiD
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden
- S. Kosen
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden
- A. Osman
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden
- M. Prunnila
- VTT Technical Research Centre of Finland Ltd., QTF Centre of Excellence, VTT Espoo, Finland
- J. Hassel
- ORCiD
- VTT Technical Research Centre of Finland Ltd., QTF Centre of Excellence, VTT Espoo, Finland
- J. Bylander
- ORCiD
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden
- J. Govenius
- VTT Technical Research Centre of Finland Ltd., QTF Centre of Excellence, VTT Espoo, Finland
- DOI
- https://doi.org/10.1109/TQE.2022.3209881
- Journal volume & issue
-
Vol. 3
pp. 1 – 10
Abstract
We fabricate and characterize superconducting through-silicon vias and electrodes suitable for superconducting quantum processors. We measure internal quality factors of a million for test resonators excited at single-photon levels, on chips with superconducting vias used to stitch ground planes on the front and back sides of the chips. This resonator performance is on par with the state of the art for silicon-based planar solutions, despite the presence of vias. Via stitching of ground planes is an important enabling technology for increasing the physical size of quantum processor chips and is a first step toward more complex quantum devices with 3-D integration.
Keywords
- High-Q resonator
- quantum coherence
- superconducting through-silicon via (TSV)
- tantalum
- titanium nitride