Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors
Deng Tao,
Li Shasha,
Li Yuning,
Zhang Yang,
Sun Jingye,
Yin Weijie,
Wu Weidong,
Zhu Mingqiang,
Wang Yingxin,
Liu Zewen
Affiliations
Deng Tao
School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing100044, China
Li Shasha
School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing100044, China
Li Yuning
School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing100044, China
Zhang Yang
School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing100044, China
Sun Jingye
School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing100044, China
Yin Weijie
School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing100044, China
Wu Weidong
Key Laboratory of Particle & Radiation Imaging (Tsinghua University), Ministry of Education, Department of Engineering Physics, Tsinghua University, Beijing, 100084, China
Zhu Mingqiang
School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing100044, China
Wang Yingxin
Key Laboratory of Particle & Radiation Imaging (Tsinghua University), Ministry of Education, Department of Engineering Physics, Tsinghua University, Beijing, 100084, China
Liu Zewen
Institute of Microelectronics, Tsinghua University, Beijing, 100084, China
The molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.
