On the Reliability of Accelerated Testing in AIGaAs/InGaAs/GaAs
PHEMTs

K. F. Yarn; W. C. Chien; C. S. Wang

doi:10.1080/0882751031000073888

Active and Passive Electronic Components (Jan 2002)

On the Reliability of Accelerated Testing in AIGaAs/InGaAs/GaAs PHEMTs

K. F. Yarn,
W. C. Chien,
C. S. Wang

Affiliations

K. F. Yarn: Far East College, Department of Electrical Engineering, Optoelectronic Semiconductor Center, Hsin-Shih, Tainan, Taiwan 744, China
W. C. Chien: Far East College, Department of Electrical Engineering, Optoelectronic Semiconductor Center, Hsin-Shih, Tainan, Taiwan 744, China
C. S. Wang: National Cheng Kung University, Department of Electrical Engineering, Tainan, Taiwan 701, China

DOI: https://doi.org/10.1080/0882751031000073888
Journal volume & issue: Vol. 26, no. 2
pp. 115 – 127

Abstract

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The study of different stress on device characteristics of AlGaAs/InGaAs/GaAs PHEMTs has been researched and developed in this report. Many catastrophic degradation mechanisms such as hot-electron, gate-drain breakdown, IDS, IG , VP and gate Schottky barrier effects are discussed in detail. In addition, the accelerated testing of the temperature-dependent effects on ID ,Gm and Schottky barrier are examined.

Published in Active and Passive Electronic Components

ISSN: 0882-7516 (Print); 1563-5031 (Online)
Publisher: Wiley
Country of publisher: United Kingdom
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://onlinelibrary.wiley.com/journal/5080

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