Valence band engineering of GaAsBi for low noise avalanche photodiodes

Yuchen Liu; Xin Yi; Nicholas J. Bailey; Zhize Zhou; Thomas B. O. Rockett; Leh W. Lim; Chee H. Tan; Robert D. Richards; John P. R. David

doi:10.1038/s41467-021-24966-0

Nature Communications (Aug 2021)

Valence band engineering of GaAsBi for low noise avalanche photodiodes

Yuchen Liu,
Xin Yi,
Nicholas J. Bailey,
Zhize Zhou,
Thomas B. O. Rockett,
Leh W. Lim,
Chee H. Tan,
Robert D. Richards,
John P. R. David

Affiliations

Yuchen Liu: Department of Electronic and Electrical Engineering, University of Sheffield
Xin Yi: Department of Electronic and Electrical Engineering, University of Sheffield
Nicholas J. Bailey: Department of Electronic and Electrical Engineering, University of Sheffield
Zhize Zhou: Department of Electronic and Electrical Engineering, University of Sheffield
Thomas B. O. Rockett: Department of Electronic and Electrical Engineering, University of Sheffield
Leh W. Lim: Department of Electronic and Electrical Engineering, University of Sheffield
Chee H. Tan: Department of Electronic and Electrical Engineering, University of Sheffield
Robert D. Richards: Department of Electronic and Electrical Engineering, University of Sheffield
John P. R. David: Department of Electronic and Electrical Engineering, University of Sheffield

DOI: https://doi.org/10.1038/s41467-021-24966-0
Journal volume & issue: Vol. 12, no. 1
pp. 1 – 8

Abstract

Read online

An avalanche photodiode is an opto-electronic amplifier that uses impact ionization to provide enhanced sensitivity at the expense of excess noise. In this manuscript, the authors demonstrate that a small amount of Bismuth (Bi) in Gallium Arsenide (GaAs) avalanche photodiodes significantly reduces this excess noise.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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