Simulation of the Optimized Structure of a Laterally Coupled Distributed Feedback (LC-DFB) Semiconductor Laser Above Threshold

Engineering, Technology & Applied Science Research. 2013;3(5):522-525

 

Journal Homepage

Journal Title: Engineering, Technology & Applied Science Research

ISSN: 2241-4487 (Print); 1792-8036 (Online)

Publisher: Engineering, Technology & Applied Science Research

LCC Subject Category: Technology: Engineering (General). Civil engineering (General) | Technology: Technology (General): Industrial engineering. Management engineering: Information technology

Country of publisher: Greece

Language of fulltext: English

Full-text formats available: PDF

 

AUTHORS

M. Seifouri
A. Faraji

EDITORIAL INFORMATION

Blind peer review

Editorial Board

Instructions for authors

Time From Submission to Publication: 12 weeks

 

Abstract | Full Text

In this paper, the laterally coupled distributed feedback semiconductor laser is studied. In the simulations performed, variations of structural parameters such as the grating amplitude a, the ridge width W, the thickness of the active region d, and other structural properties are considered. It is concluded that for certain values ​​of structural parameters, the laser maintains the highest output power, the lowest distortion Bragg frequency δL and the smallest changes in the wavelength λ. Above threshold, output power more than 40mW and SMSR values greater than 50 dB were achieved.