Nature Communications (Jul 2020)
Chemical instability at chalcogenide surfaces impacts chalcopyrite devices well beyond the surface
- Diego Colombara,
- Hossam Elanzeery,
- Nicoleta Nicoara,
- Deepanjan Sharma,
- Marcel Claro,
- Torsten Schwarz,
- Anna Koprek,
- Max Hilaire Wolter,
- Michele Melchiorre,
- Mohit Sood,
- Nathalie Valle,
- Oleksandr Bondarchuk,
- Finn Babbe,
- Conrad Spindler,
- Oana Cojocaru-Miredin,
- Dierk Raabe,
- Phillip J. Dale,
- Sascha Sadewasser,
- Susanne Siebentritt
Affiliations
- Diego Colombara
- Physics and Materials Science Research Unit, University of Luxembourg
- Hossam Elanzeery
- Physics and Materials Science Research Unit, University of Luxembourg
- Nicoleta Nicoara
- International Iberian Nanotechnology Laboratory
- Deepanjan Sharma
- International Iberian Nanotechnology Laboratory
- Marcel Claro
- International Iberian Nanotechnology Laboratory
- Torsten Schwarz
- Max-Planck-Institut für Eisenforschung GmbH
- Anna Koprek
- Max-Planck-Institut für Eisenforschung GmbH
- Max Hilaire Wolter
- Physics and Materials Science Research Unit, University of Luxembourg
- Michele Melchiorre
- Physics and Materials Science Research Unit, University of Luxembourg
- Mohit Sood
- Physics and Materials Science Research Unit, University of Luxembourg
- Nathalie Valle
- Luxembourg Institute of Science and Technology
- Oleksandr Bondarchuk
- International Iberian Nanotechnology Laboratory
- Finn Babbe
- Physics and Materials Science Research Unit, University of Luxembourg
- Conrad Spindler
- Physics and Materials Science Research Unit, University of Luxembourg
- Oana Cojocaru-Miredin
- Max-Planck-Institut für Eisenforschung GmbH
- Dierk Raabe
- Max-Planck-Institut für Eisenforschung GmbH
- Phillip J. Dale
- Physics and Materials Science Research Unit, University of Luxembourg
- Sascha Sadewasser
- International Iberian Nanotechnology Laboratory
- Susanne Siebentritt
- Physics and Materials Science Research Unit, University of Luxembourg
- DOI
- https://doi.org/10.1038/s41467-020-17434-8
- Journal volume & issue
-
Vol. 11,
no. 1
pp. 1 – 14
Abstract
Anion vacancies are a hurdle for technologies based on chalcogenide semiconductors and topological insulators. Even at room temperature, oxidation and cyanide etching can lead to selenium vacancies in CuInSe2 photovoltaic material but suitable post deposition treatments can mitigate their effect.
