Informatika (Oct 2016)

NUMERICAL SIMULATION OF THE INFLUENCE OF RADIATION ON THE MOS DEVICES PARAMETERS

  • G. M. Zayats,
  • F. F. Komarov,
  • A. F. Komarov

Journal volume & issue
Vol. 0, no. 3
pp. 52 – 61

Abstract

Read online

A model describing the space-time evolution of the charge which arises in the dielectric struc-ture of metal-insulator-semiconductor under ionizing radiation of X-ray and gamma-rays is consi-dered. The system of equations is solved by the numerical method. For realization of the difference problem an iterative algorithm is developed. The results of numerical modeling are presented.