Performance analysis of OTFT-based SRAM topologies

Abstract

In terms of mechanical flexibility, organic SRAM offers better designs and a commercially feasible option with the ability to deliver acceptable performance. This paper investigates the implementation of different SRAM topologies based on organic thin film transistors (OTFTs). In this work, a compact spice model is used to simulate pOTFT and nOTFT in LTSpice software. Time delays, power consumption, the power delay product (PDP), and static noise margin (SNM) for read and write operations are calculated, and a comparative analysis of OTFT based 6T, 7T, 8T, and 9T SRAM topologies is performed. Among different topologies, 9T OTFT SRAM cell achieves a 1.67× increase in SNM, compared to conventional 6T OTFT-based SRAM cell. The highest figure of merit value of 9T SRAM cell indicates its suitability for various applications.

Keywords

• Organic thin film transistor (OTFT)
• SRAM
• Static noise margin (SNM)
• Power delay product (PDP)