III-Nitride Optoelectronic Devices: From Ultraviolet Toward Terahertz

Abstract

We review III-Nitride optoelectronic device technologies with an emphasis on recent breakthroughs. We start with a brief summary of historical accomplishments and then report the state of the art in three key spectral regimes as follows: 1) Ultraviolet (AlGaN-based avalanche photodiodes, single photon detectors, focal plane arrays, and light-emitting diodes); 2) Visible (InGaN-based solid state lighting, lasers, and solar cells); and 3) Near-, mid-infrared, and terahertz (AlGaN/GaN-based gap-engineered intersubband devices). We also describe future trends in III-Nitride optoelectronic devices.

Keywords

• III-Nitrides
• AlGaInN
• AlGaN
• InGaN
• AlGaN/GaN
• ultraviolet