Nature Communications (Sep 2019)

Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices

  • Lei Yin,
  • Peng He,
  • Ruiqing Cheng,
  • Feng Wang,
  • Fengmei Wang,
  • Zhenxing Wang,
  • Yao Wen,
  • Jun He

DOI
https://doi.org/10.1038/s41467-019-12200-x
Journal volume & issue
Vol. 10, no. 1
pp. 1 – 8

Abstract

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Utilization of inevitable defect states in 2D materials can enable efficient photodetection and memory applications. Here, the authors report use of defect-induced deep traps to capture and store carriers in exfoliated flakes of MoS2xSe2(1-x) as photodetectors with high responsivity of 2.4 × 105 A/W at 1550 nm and non-volatile memories with photo-switching ratio of 108.