Nature Communications (Sep 2019)
Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices
Abstract
Utilization of inevitable defect states in 2D materials can enable efficient photodetection and memory applications. Here, the authors report use of defect-induced deep traps to capture and store carriers in exfoliated flakes of MoS2xSe2(1-x) as photodetectors with high responsivity of 2.4 × 105 A/W at 1550 nm and non-volatile memories with photo-switching ratio of 108.