Next Materials (Apr 2025)

Enhanced room temperature exchange bias caused by antiferromagnetism strengthening

  • Jiale Guo,
  • Qizhong Zhao,
  • Siying Yu,
  • Sen Kong,
  • Long Xian,
  • Adil Murtaza,
  • Yin Zhang,
  • Chao Zhou,
  • Fanghua Tian,
  • Sen Yang

Journal volume & issue
Vol. 7
p. 100347

Abstract

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In this work, Mn55Bi45-xBx (0 ≤ x ≤ 2) alloys were prepared by arc-melting, and the low-temperature ferromagnetic MnBi phase was investigated in 300 K. Through the XRD refinement results, it can be found that the lattice parameters of the alloys change with the B doping amount. When x = 1, an optimal room temperature spontaneous exchange bias effect was observed in the Mn55Bi44B. This phenomenon can be attributed to B with a smaller atomic radius occupying the Bi position, resulting in more Mn atoms into interstitial sites and more antiferromagnetic clusters on the ferromagnetic matrix. This work focuses on the effect of B doping on the structure and exchange bias behavior in Mn55Bi45 alloy, providing a way to design room temperature spintronic devices.

Keywords