High quantum yield of In‐based halide perovskites for white light emission and flexible x‐ray scintillators
Dehai Liang,
Xiaohui Liu,
Binbin Luo,
Qingkai Qian,
Wensi Cai,
Shuangyi Zhao,
Jiangzhao Chen,
Zhigang Zang
Affiliations
Dehai Liang
Key Laboratory of Optoelectronic Technology and Systems (Ministry of Education) Chongqing University Chongqing China
Xiaohui Liu
Department of Chemistry and Key Laboratory for Preparation and Application of Ordered Structural Materials of Guangdong Province Shantou University Shantou Guangdong Province China
Binbin Luo
Department of Chemistry and Key Laboratory for Preparation and Application of Ordered Structural Materials of Guangdong Province Shantou University Shantou Guangdong Province China
Qingkai Qian
Key Laboratory of Optoelectronic Technology and Systems (Ministry of Education) Chongqing University Chongqing China
Wensi Cai
Key Laboratory of Optoelectronic Technology and Systems (Ministry of Education) Chongqing University Chongqing China
Shuangyi Zhao
Key Laboratory of Optoelectronic Technology and Systems (Ministry of Education) Chongqing University Chongqing China
Jiangzhao Chen
Key Laboratory of Optoelectronic Technology and Systems (Ministry of Education) Chongqing University Chongqing China
Zhigang Zang
Key Laboratory of Optoelectronic Technology and Systems (Ministry of Education) Chongqing University Chongqing China
Abstract In‐based halides always present low photoluminescence quantum yield (PLQY) because of poor absorption, limiting their potential applications in luminescence‐related fields. In this work, zero‐dimensional MA4InCl7 [MA+: CH3NH3+] halides with different Sb3+ doping level are prepared through solvent evaporating method. The Sb3+‐doped MA4InCl7 shows a broadband yellow emission with full width at half‐maximum of 180 nm and a high PLQY of 84%. Such broadband emission originates from the self‐trapped excitons demonstrated by experimental results and theoretical calculations. Additionally, the Sb3+‐doped MA4InCl7 is further employed to fabricate white‐light‐emitting diodes, which possesses high color rendering index of 91 and excellent operating stability up to 400 h. Moreover, flexible Sb3+‐doped MA4InCl7 films are also prepared as x‐ray scintillators, exhibiting low detection limit of 63.3 nGyair/s and high spatial resolution of 10.0 lp/mm. Thus, this work provides guidance to design perovskite‐based devices with bright luminescence and x‐ray detection with excellent flexibility.
