Explorations on Growth of Blue-Green-Yellow-Red InGaN Quantum Dots by Plasma-Assisted Molecular Beam Epitaxy

Xue Zhang; Zhiwei Xing; Wenxian Yang; Haibing Qiu; Ying Gu; Yuta Suzuki; Sakuya Kaneko; Yuki Matsuda; Shinji Izumi; Yuichi Nakamura; Yong Cai; Lifeng Bian; Shulong Lu; Atsushi Tackeuchi

doi:10.3390/nano12050800

Nanomaterials (Feb 2022)

Explorations on Growth of Blue-Green-Yellow-Red InGaN Quantum Dots by Plasma-Assisted Molecular Beam Epitaxy

Xue Zhang,
Zhiwei Xing,
Wenxian Yang,
Haibing Qiu,
Ying Gu,
Yuta Suzuki,
Sakuya Kaneko,
Yuki Matsuda,
Shinji Izumi,
Yuichi Nakamura,
Yong Cai,
Lifeng Bian,
Shulong Lu,
Atsushi Tackeuchi

Affiliations

Xue Zhang: School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
Zhiwei Xing: School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
Wenxian Yang: Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China
Haibing Qiu: School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
Ying Gu: School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
Yuta Suzuki: Department of Applied Physics, Waseda University, Tokyo 169-8555, Japan
Sakuya Kaneko: Department of Applied Physics, Waseda University, Tokyo 169-8555, Japan
Yuki Matsuda: Department of Applied Physics, Waseda University, Tokyo 169-8555, Japan
Shinji Izumi: Department of Applied Physics, Waseda University, Tokyo 169-8555, Japan
Yuichi Nakamura: Department of Applied Physics, Waseda University, Tokyo 169-8555, Japan
Yong Cai: Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China
Lifeng Bian: Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
Shulong Lu: Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China
Atsushi Tackeuchi: Department of Applied Physics, Waseda University, Tokyo 169-8555, Japan

DOI: https://doi.org/10.3390/nano12050800
Journal volume & issue: Vol. 12, no. 5
p. 800

Abstract

Read online

Self-assembled growth of blue-green-yellow-red InGaN quantum dots (QDs) on GaN templates using plasma-assisted molecular beam epitaxy were investigated. We concluded that growth conditions, including small N2 flow and high growth temperature are beneficial to the formation of InGaN QDs and improve the crystal quality. The lower In/Ga flux ratio and lower growth temperature are favorable for the formation of QDs of long emission wavelength. Moreover, the nitrogen modulation epitaxy method can extend the wavelength of QDs from green to red. As a result, visible light emissions from 460 nm to 622 nm have been achieved. Furthermore, a 505 nm green light-emitting diode (LED) based on InGaN/GaN MQDs was prepared. The LED has a low external quantum efficiency of 0.14% and shows an efficiency droop with increasing injection current. However, electroluminescence spectra exhibited a strong wavelength stability, with a negligible shift of less than 1.0 nm as injection current density increased from 8 A/cm2 to 160 A/cm2, owing to the screening of polarization-related electric field in QDs.

Published in Nanomaterials

ISSN: 2079-4991 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry
Website: https://www.mdpi.com/journal/nanomaterials

About the journal

Abstract

Keywords