Area-Selective Growth of Aligned ZnO Nanorod Arrays for MEMS Device Applications
Jiushuai Xu,
Klass Strempel,
Hao Zhou,
Andreas Waag,
Maik Bertke,
Angelika Schmidt,
Erwin Peiner
Affiliations
Jiushuai Xu
TU Braunschweig, Department of Semiconductor Technology, Braunschweig, Germany and Laboratory for Emerging Nanometrology (LENA), 38106, Braunschweig, Germany
Klass Strempel
TU Braunschweig, Department of Semiconductor Technology, Braunschweig, Germany and Laboratory for Emerging Nanometrology (LENA), 38106, Braunschweig, Germany
Hao Zhou
TU Braunschweig, Department of Semiconductor Technology, Braunschweig, Germany and Laboratory for Emerging Nanometrology (LENA), 38106, Braunschweig, Germany
Andreas Waag
TU Braunschweig, Department of Semiconductor Technology, Braunschweig, Germany and Laboratory for Emerging Nanometrology (LENA), 38106, Braunschweig, Germany
Maik Bertke
TU Braunschweig, Department of Semiconductor Technology, Braunschweig, Germany and Laboratory for Emerging Nanometrology (LENA), 38106, Braunschweig, Germany
Angelika Schmidt
TU Braunschweig, Department of Semiconductor Technology, Braunschweig, Germany and Laboratory for Emerging Nanometrology (LENA), 38106, Braunschweig, Germany
Erwin Peiner
TU Braunschweig, Department of Semiconductor Technology, Braunschweig, Germany and Laboratory for Emerging Nanometrology (LENA), 38106, Braunschweig, Germany
ZnO nanorods (NRs) arrays with good vertical alignment were selectively grown on microscale patterned surfaces by a MEMS-compatible, low-temperature chemical-bath deposition method (CBD). The direct-current (DC) sputtered and subsequently annealed ZnO seed-layer was found to have a crucial effect on the ZnO NRs growth. Depending on the pre-annealing temperature between 200 °C and 700 °C, which is compatible with our microcantilever fabrication process, diameters and area densities of the NRs of 60–99 nm and 17–27 µm−2 were observed, respectively, with the best alignment at 600 °C. A surface-area enlargement factor of 48 was achieved with respect to a ZnO layer indicating the potential of ZnO NRs arrays for MEMS applications, such as gas sensing.
