Peculiarities of electrooptical characteristics of gallium phosphide light-emitting diodes in high injection level conditions

Abstract

Electroluminescence of green N-doped gallium phosphide light-emitting diodes was studied. The negative differential resistance region in the current-voltage characteristics was found at low temperature (Т ≤ 90 К). Possible reason of this phenomenon is the redistribution of recombinational flows between annihilation channels on isolated nitrogen atoms and annihilation channel on the NN1 pairs.

Keywords

• gallium phosphide
• electroluminescence
• exciton
• negative differential resistance