Heteroepitaxy of diamond semiconductor on iridium: a review

Abstract

As one of the representatives of carbon-based semiconductors, diamond is called the “Mount Everest” of electronic materials. To maximize its properties and realize its industrial applications, the fabrication of wafer-scale high-quality diamonds is critical. To date, heteroepitaxy is considered as a promising method for the growth of diamond wafers with considerable development. In this review, fundamentals of diamond heteroepitaxy is firstly introduced from several perspectives including nucleation thermodynamics and kinetic, nucleation process at the atomic level, as well as the interplay between the epitaxial film and substrate. Second, the bias enhanced nucleation (BEN) method is reviewed, including BEN setup, BEN process window, nucleation phenomenology (mainly on Iridium), nucleation mechanism by ion bombardment, and large-scale nucleation realization. Third, the following textured growth process is presented, as well as grain boundary annihilation, and dislocation and stress reduction technologies. Fourth, the applications of diamonds in electronic devices are studied, showing its excellent performances in the future power and electronic devices. Finally, prospects in this field are proposed from several aspects.

Keywords

• diamond wafer
• heteroepitaxy
• large size
• bias enhanced nucleation
• textured growth
• electronic applications