The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm2
Lin-Yue Liu,
Ling Wang,
Peng Jin,
Jin-Liang Liu,
Xian-Peng Zhang,
Liang Chen,
Jiang-Fu Zhang,
Xiao-Ping Ouyang,
Ao Liu,
Run-Hua Huang,
Song Bai
Affiliations
Lin-Yue Liu
School of Nuclear Science and Technology, Xi’an Jiaotong University, No. 28, Xianning West Road, Xi’an 710049, China
Ling Wang
State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices, Nanjing Electronic Devices Institute, No. 524 East Zhongshan Road, Nanjing 210016, China
Peng Jin
State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi’an 710024, China
Jin-Liang Liu
State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi’an 710024, China
Xian-Peng Zhang
State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi’an 710024, China
Liang Chen
State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi’an 710024, China
Jiang-Fu Zhang
State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi’an 710024, China
Xiao-Ping Ouyang
School of Nuclear Science and Technology, Xi’an Jiaotong University, No. 28, Xianning West Road, Xi’an 710049, China
Ao Liu
State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices, Nanjing Electronic Devices Institute, No. 524 East Zhongshan Road, Nanjing 210016, China
Run-Hua Huang
State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices, Nanjing Electronic Devices Institute, No. 524 East Zhongshan Road, Nanjing 210016, China
Song Bai
State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices, Nanjing Electronic Devices Institute, No. 524 East Zhongshan Road, Nanjing 210016, China
Silicon carbide (SiC) detectors of an Ni/4H-SiC Schottky diode structure and with sensitive areas of 1–4 cm2 were fabricated using high-quality lightly doped epitaxial 4H-SiC material, and were tested in the detection of alpha particles and pulsed X-rays/UV-light. A linear energy response to alpha particles ranging from 5.157 to 5.805 MeV was obtained. The detectors were proved to have a low dark current, a good energy resolution, and a high neutron/gamma discrimination for pulsed radiation, showing the advantages in charged particle detection and neutron detection in high-temperature and high-radiation environments.
