Investigation of CuGaSe2/CuInSe2 double heterojunction interfaces grown by molecular beam epitaxy

Sathiabama Thiru; Masaki Asakawa; Kazuki Honda; Atsushi Kawaharazuka; Atsushi Tackeuchi; Toshiki Makimoto; Yoshiji Horikoshi

doi:10.1063/1.4908229

AIP Advances (Feb 2015)

Investigation of CuGaSe2/CuInSe2 double heterojunction interfaces grown by molecular beam epitaxy

Sathiabama Thiru,
Masaki Asakawa,
Kazuki Honda,
Atsushi Kawaharazuka,
Atsushi Tackeuchi,
Toshiki Makimoto,
Yoshiji Horikoshi

Affiliations

Sathiabama Thiru: School of Advanced Science and Engineering, Waseda University, 3-4-1, Okubo, Shinjuku, Tokyo 169-8555, JAPAN
Masaki Asakawa: School of Advanced Science and Engineering, Waseda University, 3-4-1, Okubo, Shinjuku, Tokyo 169-8555, JAPAN
Kazuki Honda: School of Advanced Science and Engineering, Waseda University, 3-4-1, Okubo, Shinjuku, Tokyo 169-8555, JAPAN
Atsushi Kawaharazuka: CREST, JST, 4-1-8, Honcho Kawaguchi, Saitama, 332-0012, JAPAN
Atsushi Tackeuchi: School of Advanced Science and Engineering, Waseda University, 3-4-1, Okubo, Shinjuku, Tokyo 169-8555, JAPAN
Toshiki Makimoto: School of Advanced Science and Engineering, Waseda University, 3-4-1, Okubo, Shinjuku, Tokyo 169-8555, JAPAN
Yoshiji Horikoshi: School of Advanced Science and Engineering, Waseda University, 3-4-1, Okubo, Shinjuku, Tokyo 169-8555, JAPAN

DOI: https://doi.org/10.1063/1.4908229
Journal volume & issue: Vol. 5, no. 2
pp. 027120 – 027120-7

Abstract

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In-situ reflection high-energy electron diffraction (RHEED) observation and X-ray diffraction measurements were performed on heterojunction interfaces of CuGaSe2/CnInSe2/CuGaSe2 grown on GaAs (001) using migration-enhanced epitaxy. The streaky RHEED pattern and persistent RHEED intensity oscillations caused by the alternate deposition of migration-enhanced epitaxy sequence are observed and the growths of smooth surfaces are confirmed. RHEED observation results also confirmed constituent material interdiffusion at the heterointerface. Cross-sectional transmission electron microscopy showed a flat and abrupt heterointerface when the substrate temperature is as low as 400 °C. These have been confirmed even by X-ray diffraction and photoluminescence measurements.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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