Resistive switching properties for fluorine doped titania fabricated using atomic layer deposition
Minjae Kim,
Yue Wang,
Dong-eun Kim,
Qingyi Shao,
Hong-Sub Lee,
Hyung-Ho Park
Affiliations
Minjae Kim
Department of Materials Science and Engineering, Yonsei University, Seoul 03722, South Korea
Yue Wang
Department of Materials Science and Engineering, Yonsei University, Seoul 03722, South Korea
Dong-eun Kim
Department of Materials Science and Engineering, Yonsei University, Seoul 03722, South Korea
Qingyi Shao
Department of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006, China and Guangdong Provincial Key Laboratory of Nuclear Science, Institute of Quantum Matter, South China Normal University, Guangzhou 510006, China
Hong-Sub Lee
Department of Materials Science and Engineering, Kangwon National University, Chuncheon 24341, South Korea
Hyung-Ho Park
Department of Materials Science and Engineering, Yonsei University, Seoul 03722, South Korea
This study demonstrates a new resistive switching material, F-doped TiO2 (F:TiO2), fabricated by atomic layer deposition (ALD) with an in-house fluorine source for resistive random access memory (RRAM) devices. Controlling oxygen vacancies is required since RRAM uses resistive switching (RS) characteristics by redistributing oxygen ions in oxide, and poor oxygen defect control has been shown to significantly reduce RRAM reliability. Therefore, this study designed an F based RRAM device using fluorine anions rather than oxygen defect for the main agent of RS behavior. We developed the F:TiO2 RRAM material using a novel in situ doping method in ALD and investigated its RS behaviors. The Pt/F:TiO2/Pt device exhibited forming-less bipolar RS and self-rectifying behavior by fluorine anion migration, effectively reducing the sneak current in crossbar array architecture RRAM. The doped fluorine passivated and reduced oxygen related defects in TiO2, confirmed by x-ray photoelectron spectroscopy analysis. Adopting the F-based RS material by ALD provides a viable candidate for high reliability RRAM.
