Characterization of Nanocrystalline SiGe Thin Film Solar Cell with Double Graded-Dead Absorption Layer

Chao-Chun Wang; Dong-Sing Wuu; Shui-Yang Lien; Yang-Shih Lin; Chueh-Yang Liu; Chia-Hsum Hsu; Chia-Fu Chen

doi:10.1155/2012/890284

International Journal of Photoenergy (Jan 2012)

Characterization of Nanocrystalline SiGe Thin Film Solar Cell with Double Graded-Dead Absorption Layer

Chao-Chun Wang,
Dong-Sing Wuu,
Shui-Yang Lien,
Yang-Shih Lin,
Chueh-Yang Liu,
Chia-Hsum Hsu,
Chia-Fu Chen

Affiliations

Chao-Chun Wang: Department of Materials Science and Engineering, National Chung Hsing University, 250 Kuo Kuang Road, Taichung 402, Taiwan
Dong-Sing Wuu: Department of Materials Science and Engineering, National Chung Hsing University, 250 Kuo Kuang Road, Taichung 402, Taiwan
Shui-Yang Lien: Department of Materials Science and Engineering, MingDao University, ChungHua 52345, Taiwan
Yang-Shih Lin: Department of Materials Science and Engineering, National Chung Hsing University, 250 Kuo Kuang Road, Taichung 402, Taiwan
Chueh-Yang Liu: Department of Materials Science and Engineering, MingDao University, ChungHua 52345, Taiwan
Chia-Hsum Hsu: Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan
Chia-Fu Chen: Department of Materials Science and Engineering, MingDao University, ChungHua 52345, Taiwan

DOI: https://doi.org/10.1155/2012/890284
Journal volume & issue: Vol. 2012

Abstract

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The nanocrystalline silicon-germanium (nc-SiGe) thin films were deposited by high-frequency (27.12 MHz) plasma-enhanced chemical vapor deposition (HF-PECVD). The films were used in a silicon-based thin film solar cell with graded-dead absorption layer. The characterization of the nc-SiGe films are analyzed by scanning electron microscopy, UV-visible spectroscopy, and Fourier transform infrared absorption spectroscopy. The band gap of SiGe alloy can be adjusted between 0.8 and 1.7 eV by varying the gas ratio. For thin film solar cell application, using double graded-dead i-SiGe layers mainly leads to an increase in short-circuit current and therefore cell conversion efficiency. An initial conversion efficiency of 5.06% and the stabilized efficiency of 4.63% for an nc-SiGe solar cell were achieved.

Published in International Journal of Photoenergy

ISSN: 1110-662X (Print); 1687-529X (Online)
Publisher: Hindawi Limited
Country of publisher: United Kingdom
LCC subjects: Technology: Mechanical engineering and machinery: Renewable energy sources
Website: https://onlinelibrary.wiley.com/journal/3837

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