Effect of Dilute Magnetism in a Topological Insulator

Firoza Kabir; M. Mofazzel Hosen; Xiaxin Ding; Christopher Lane; Christopher Lane; Gyanendra Dhakal; Yangyang Liu; Klauss Dimitri; Christopher Sims; Sabin Regmi; Anup Pradhan Sakhya; Luis Persaud; John E. Beetar; Yong Liu; Yong Liu; Michael Chini; Arjun K. Pathak; Jian-Xin Zhu; Jian-Xin Zhu; Krzysztof Gofryk; Madhab Neupane

doi:10.3389/fmats.2021.706658

Frontiers in Materials (Nov 2021)

Effect of Dilute Magnetism in a Topological Insulator

Firoza Kabir,
M. Mofazzel Hosen,
Xiaxin Ding,
Christopher Lane,
Christopher Lane,
Gyanendra Dhakal,
Yangyang Liu,
Klauss Dimitri,
Christopher Sims,
Sabin Regmi,
Anup Pradhan Sakhya,
Luis Persaud,
John E. Beetar,
Yong Liu,
Yong Liu,
Michael Chini,
Arjun K. Pathak,
Jian-Xin Zhu,
Jian-Xin Zhu,
Krzysztof Gofryk,
Madhab Neupane

Affiliations

Firoza Kabir: Department of Physics, University of Central Florida, Orlando, FL, United States
M. Mofazzel Hosen: Department of Physics, University of Central Florida, Orlando, FL, United States
Xiaxin Ding: Idaho National Laboratory, Idaho Falls, ID, United States
Christopher Lane: Theoretical Division, Los Alamos National Laboratory, Los Alamos, NM, United States
Christopher Lane: Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, United States
Gyanendra Dhakal: Department of Physics, University of Central Florida, Orlando, FL, United States
Yangyang Liu: Department of Physics, University of Central Florida, Orlando, FL, United States
Klauss Dimitri: Department of Physics, University of Central Florida, Orlando, FL, United States
Christopher Sims: Department of Physics, University of Central Florida, Orlando, FL, United States
Sabin Regmi: Department of Physics, University of Central Florida, Orlando, FL, United States
Anup Pradhan Sakhya: Department of Physics, University of Central Florida, Orlando, FL, United States
Luis Persaud: Department of Physics, University of Central Florida, Orlando, FL, United States
John E. Beetar: Department of Physics, University of Central Florida, Orlando, FL, United States
Yong Liu: Crystal Growth Facility, Institute of Physics, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
Yong Liu: Ames Laboratory, US Department of Energy, Ames, IA, United States
Michael Chini: Department of Physics, University of Central Florida, Orlando, FL, United States
Arjun K. Pathak: Department of Physics, SUNY Buffalo State, Buffalo, NY, United States
Jian-Xin Zhu: Theoretical Division, Los Alamos National Laboratory, Los Alamos, NM, United States
Jian-Xin Zhu: Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, United States
Krzysztof Gofryk: Idaho National Laboratory, Idaho Falls, ID, United States
Madhab Neupane: Department of Physics, University of Central Florida, Orlando, FL, United States

DOI: https://doi.org/10.3389/fmats.2021.706658
Journal volume & issue: Vol. 8

Abstract

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Three-dimensional (3D) topological insulator (TI) has emerged as a unique state of quantum matter and generated enormous interests in condensed matter physics. The surfaces of a 3D TI consist of a massless Dirac cone, which is characterized by the Z2 topological invariant. Introduction of magnetism on the surface of a TI is essential to realize the quantum anomalous Hall effect and other novel magneto-electric phenomena. Here, by using a combination of first-principles calculations, magneto-transport and angle-resolved photoemission spectroscopy (ARPES), we study the electronic properties of gadolinium (Gd)-doped Sb2Te3. Our study shows that Gd doped Sb2Te3 is a spin-orbit-induced bulk band-gap material, whose surface is characterized by a single topological surface state. Our results provide a new platform to investigate the interactions between dilute magnetism and topology in magnetic doped topological materials.

Published in Frontiers in Materials

ISSN: 2296-8016 (Online)
Publisher: Frontiers Media S.A.
Country of publisher: Switzerland
LCC subjects: Technology
Website: https://www.frontiersin.org/journals/materials

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