Area-selective deposition of germanium on patterned graphene/monolayer molybdenum disulfide stacks via dipole engineering
Yeonjoo Lee,
Towfiq Ahmed,
Xuejing Wang,
Michael T. Pettes,
Yeonhoo Kim,
Jeongwon Park,
Woo Seok Yang,
Kibum Kang,
Young Joon Hong,
Soyeong Kwon,
Jinkyoung Yoo
Affiliations
Yeonjoo Lee
Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
Towfiq Ahmed
National Security Directorate,Pacific Northwest National Laboratory, Richland, Washington 99354, USA
Xuejing Wang
Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
Michael T. Pettes
Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
Yeonhoo Kim
Interdisciplinary Materials Measurement Institute,Korea Research Institute of Standards and Science, Daejeon 34133, Republic of Korea
Jeongwon Park
Department of Materials Science and Engineering,Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
Woo Seok Yang
Electronic Material and Device Research Center,Korea Electronics Technology Institute, Seongnam, Gyeonggi-do 13509, Republic of Korea
Kibum Kang
Department of Materials Science and Engineering,Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
Young Joon Hong
Department of Nanotechnology and Advanced Materials Engineering,Sejong University, Seoul 05006, Republic of Korea
Soyeong Kwon
Department of Mechanical and Aerospace Engineering,University of California Irvine, Irvine, California 92697, USA
Jinkyoung Yoo
Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
Heterogeneous integration of two-dimensional materials and the conventional semiconductor has opened opportunities for next-generation semiconductor devices and their processing. Heterogeneous integration has been studied for economical manufacturing by substrate recycling and novel functionalities by a combination of incommensurate materials. However, utilizing the integration requires controlling locations of the integrated architectures. Here, we show area-selective deposition (ASD) of germanium on the graphene/MoS2 stack. Ge nucleation precisely occurred on the surfaces of the patterned graphene/MoS2 stack via dipole engineering. In this study, the growth temperature of ASD of Ge was significantly lower than that based on precursor desorption on SiO2. The first-principles calculations revealed that Ge deposited by ASD on the graphene/MoS2 stack was not affected by charge transfer. This work provides a viable way to utilize atomically thin materials for next-generation semiconductor devices, which can be applicable for “Beyond Moore” and “More Moore” approaches.
