Local manipulation of skyrmion lattice in Fe3GaTe2 at room temperature

Shuaizhao Jin; Zhan Wang; Shouzhe Dong; Yiting Wang; Kun Han; Guangcheng Wang; Zunyi Deng; Xingan Jiang; Ying Zhang; Houbing Huang; Jiawang Hong; Xiaolei Wang; Tianlong Xia; Sang-Wook Cheong; Xueyun Wang

Journal of Materiomics (Mar 2025)

Local manipulation of skyrmion lattice in Fe3GaTe2 at room temperature

Shuaizhao Jin,
Zhan Wang,
Shouzhe Dong,
Yiting Wang,
Kun Han,
Guangcheng Wang,
Zunyi Deng,
Xingan Jiang,
Ying Zhang,
Houbing Huang,
Jiawang Hong,
Xiaolei Wang,
Tianlong Xia,
Sang-Wook Cheong,
Xueyun Wang

Affiliations

Shuaizhao Jin: School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China
Zhan Wang: Beijing National State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
Shouzhe Dong: Advanced Research Institute of Multidisciplinary Science, and School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, China
Yiting Wang: Beijing Key Laboratory of Opto-Electronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing, 100872, China; Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China
Kun Han: Beijing Key Laboratory of Opto-Electronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing, 100872, China; Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China
Guangcheng Wang: School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing, 100124, China
Zunyi Deng: School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China
Xingan Jiang: School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China; Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo City, 315211, China
Ying Zhang: Beijing National State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
Houbing Huang: Advanced Research Institute of Multidisciplinary Science, and School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, China
Jiawang Hong: School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China
Xiaolei Wang: School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing, 100124, China; Corresponding author.
Tianlong Xia: Beijing Key Laboratory of Opto-Electronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing, 100872, China; Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China; Corresponding author. Beijing Key Laboratory of Opto-Electronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing, 100872, China.
Sang-Wook Cheong: Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ, 08854, USA
Xueyun Wang: School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China; Corresponding author.

Journal volume & issue: Vol. 11, no. 2
p. 100865

Abstract

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Motivated by advances in spintronic devices, extensive explorations are underway to uncover materials that host topologically protected spin textures, exemplified by skyrmions. One critical challenge involved in the potential application of skyrmions in van der Waals (vdW) materials is the attainment and manipulation of skyrmions at room temperature. In this study, we report the creation of an intrinsic skyrmion state in the van der Waals ferromagnet Fe3GaTe2. By employing variable temperature magnetic force microscopy, the skyrmion lattice can be locally manipulated on Fe3GaTe2 flakes. The ordering of skyrmion state is further analyzed. Our results suggest Fe3GaTe2 emerges as a highly promising contender for the realization of skyrmion-based layered spintronic memory devices.

Published in Journal of Materiomics

ISSN: 2352-8478 (Print); 2352-8486 (Online)
Publisher: Elsevier
Country of publisher: Netherlands
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
Website: https://www.sciencedirect.com/journal/journal-of-materiomics

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