Minerals (Jan 2024)

Characterisation of the Grain Morphology of Artificial Minerals (EnAMs) in Lithium Slags by Correlating Multi-Dimensional 2D and 3D Methods

  • Cindytami Rachmawati,
  • Joao Weiss,
  • Hugo Ignacio Lucas,
  • Erik Löwer,
  • Thomas Leißner,
  • Doreen Ebert,
  • Robert Möckel,
  • Bernd Friedrich,
  • Urs Alexander Peuker

DOI
https://doi.org/10.3390/min14020130
Journal volume & issue
Vol. 14, no. 2
p. 130

Abstract

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Slags from the metallurgical recycling process are an important source of resources classified as critical elements by the EU. One example is lithium from Li-ion battery recycling. In this context, the thermodynamic properties of the recycled component system play a significant role in the formation of the Li-bearing phases in the slag, in this case, LiAlO2. LiAlO2 crystal formation could be engineered and result in varying sizes and occurrences by different metallurgical processing conditions. This study uses pure ingredients to provide a synthetic model material which can be used to generate the valuable phase in the slag, or so-called engineered artificial minerals (EnAMs). The aim is to investigate the crystallisation of LiAlO2 as an EnAM by controlling the cooling conditions of the model slag to optimise the EnAM formed during crystallisation. Characterisation of the EnAMs is an important step before further mechanically processing the material to recover the valuable element Li, the Li-bearing species, respectively. Investigations are conducted using powder X-ray diffraction (XRD), X-ray fluorescence (µXRF), and X-ray Computer Tomography (XCT) on two different artificial lithium slags from MnO-Al2O3-SiO2-CaO systems with different cooling temperature gradients. The result shows the different EnAM morphology along the height of the slag, which is formed under different slag production conditions in a semi-pilot scale experiment of 5 kg. Based on the different EnAM morphologies, three defined qualities of the EnAM are identified: granular, dendritic, and irregular-shape EnAM.

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