Analysis of Current Transport Mechanism in AP-MOVPE Grown GaAsN p-i-n Solar Cell
Wojciech Dawidowski,
Beata Ściana,
Katarzyna Bielak,
Miroslav Mikolášek,
Jakub Drobný,
Jarosław Serafińczuk,
Iván Lombardero,
Damian Radziewicz,
Wojciech Kijaszek,
Arpád Kósa,
Martin Florovič,
Jaroslav Kováč,
Carlos Algora,
L’ubica Stuchlíková
Affiliations
Wojciech Dawidowski
Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland
Beata Ściana
Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland
Katarzyna Bielak
Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland
Miroslav Mikolášek
Faculty of Electrical Engineering and Information Technology, Institute of Electronics and Photonics, Slovak University of Technology in Bratislava, Ilkovicova 3, 812 19 Bratislava, Slovakia
Jakub Drobný
Faculty of Electrical Engineering and Information Technology, Institute of Electronics and Photonics, Slovak University of Technology in Bratislava, Ilkovicova 3, 812 19 Bratislava, Slovakia
Jarosław Serafińczuk
Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland
Iván Lombardero
Instituto de Energía Solar, ETSI de Telecomunicación, Universidad Politécnica de Madrid, Avenida Complutense, 30 Ciudad Universitaria, 28040 Madrid, Spain
Damian Radziewicz
Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland
Wojciech Kijaszek
Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland
Arpád Kósa
Faculty of Electrical Engineering and Information Technology, Institute of Electronics and Photonics, Slovak University of Technology in Bratislava, Ilkovicova 3, 812 19 Bratislava, Slovakia
Martin Florovič
Faculty of Electrical Engineering and Information Technology, Institute of Electronics and Photonics, Slovak University of Technology in Bratislava, Ilkovicova 3, 812 19 Bratislava, Slovakia
Jaroslav Kováč
Faculty of Electrical Engineering and Information Technology, Institute of Electronics and Photonics, Slovak University of Technology in Bratislava, Ilkovicova 3, 812 19 Bratislava, Slovakia
Carlos Algora
Instituto de Energía Solar, ETSI de Telecomunicación, Universidad Politécnica de Madrid, Avenida Complutense, 30 Ciudad Universitaria, 28040 Madrid, Spain
L’ubica Stuchlíková
Faculty of Electrical Engineering and Information Technology, Institute of Electronics and Photonics, Slovak University of Technology in Bratislava, Ilkovicova 3, 812 19 Bratislava, Slovakia
Basic knowledge about the factors and mechanisms affecting the performance of solar cells and their identification is essential when thinking of future improvements to the device. Within this paper, we investigated the current transport mechanism in GaAsN p-i-n solar cells grown with atmospheric pressure metal organic vapour phase epitaxy (AP-MOVPE). We examined the electro-optical and structural properties of a GaAsN solar cell epitaxial structure and correlated the results with temperature-dependent current-voltage measurements and deep level transient spectroscopy findings. The analysis of J-V-T measurements carried out in a wide temperature range allows for the determination of the dominant current transport mechanism in a GaAsN-based solar cell device and assign it a nitrogen interstitial defect, the presence of which was confirmed by DLTFS investigation.
