The mechanism of formation of the interlayer quantum wires in zinc-doped Bi2Te3

Abstract

Nanowires formation process on a (0001) surface of Bi2Te3 is studied. It has been established that on interlayer surface Te(1)—Te(1) there is a process of migration of atoms, moving and coagulation of clusters on the basis of Zn atoms. As a result of diffusion-limited aggregation the structures with quantum dots are formed, from which nanowires are self-organized. Such superficial structures play regulating role in working out the topological insulators based on A2VB3VI and increase thermoelectric efficiency of a composite.

Keywords

• quantum dots
• nanowires
• migration of atoms
• morphology
• topological insulators
• clusters
• diffusion
• aggregation