Self-organized quantum dots in marginally twisted MoSe2/WSe2 and MoS2/WS2 bilayers

Abstract

Abstract Moiré superlattices in twistronic heterostructures are a powerful tool for materials engineering. In marginally twisted (small misalignment angle, θ) bilayers of nearly lattice-matched two-dimensional (2D) crystals moiré patterns take the form of domains of commensurate stacking, separated by a network of domain walls (NoDW) with strain hot spots at the NoDW nodes. Here, we show that, for type-II transition metal dichalcogenide bilayers MoX2/WX2 (X=S, Se), the hydrostatic strain component in these hot spots creates quantum dots for electrons and holes. We investigate the electron/hole states bound by such objects, discussing their manifestations via the intralayer intraband infrared transitions. The electron/hole confinement, which is strongest for θ < 0.5°, leads to a red-shift of their recombination line producing single-photon emitters (SPE) broadly tuneable around 1 eV by misalignment angle. These self-organized dots can form in bilayers with both aligned and inverted MoX2 and WX2 unit cells, emitting photons with different polarizations. We also find that the hot spots of strain reduce the intralayer MoX2 A-exciton energy, enabling selective population of the quantum dot states.