Controllable Synthesis and Charge Density Wave Phase Transitions of Two-Dimensional 1T-TaS<sub>2</sub> Crystals
Xiaoguang Pan,
Tianwen Yang,
Hangxin Bai,
Jiangbo Peng,
Lujie Li,
Fangli Jing,
Hailong Qiu,
Hongjun Liu,
Zhanggui Hu
Affiliations
Xiaoguang Pan
Tianjin Key Laboratory of Functional Crystal Materials, Institute of Functional Crystals, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
Tianwen Yang
Tianjin Key Laboratory of Functional Crystal Materials, Institute of Functional Crystals, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
Hangxin Bai
Tianjin Key Laboratory of Functional Crystal Materials, Institute of Functional Crystals, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
Jiangbo Peng
Tianjin Key Laboratory of Functional Crystal Materials, Institute of Functional Crystals, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
Lujie Li
Tianjin Key Laboratory of Functional Crystal Materials, Institute of Functional Crystals, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
Fangli Jing
Tianjin Key Laboratory of Functional Crystal Materials, Institute of Functional Crystals, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
Hailong Qiu
Tianjin Key Laboratory of Functional Crystal Materials, Institute of Functional Crystals, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
Hongjun Liu
Tianjin Key Laboratory of Functional Crystal Materials, Institute of Functional Crystals, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
Zhanggui Hu
Tianjin Key Laboratory of Functional Crystal Materials, Institute of Functional Crystals, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
1T-TaS2 has attracted much attention recently due to its abundant charge density wave phases. In this work, high-quality two-dimensional 1T-TaS2 crystals were successfully synthesized by a chemical vapor deposition method with controllable layer numbers, confirmed by the structural characterization. Based on the as-grown samples, their thickness-dependency nearly commensurate charge density wave/commensurate charge density wave phase transitions was revealed by the combination of the temperature-dependent resistance measurements and Raman spectra. The phase transition temperature increased with increasing thickness, but no apparent phase transition was found on the 2~3 nm thick crystals from temperature-dependent Raman spectra. The transition hysteresis loops due to temperature-dependent resistance changes of 1T-TaS2 can be used for memory devices and oscillators, making 1T-TaS2 a promising material for various electronic applications.
